2SD1922 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SD1922 Datasheet PDF : 6 Pages
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2SD1922
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
E to C diode forward current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ic (peak)
ID
PC
Tj
Tstg
Ratings
Unit
25
V
25
V
6
V
0.8
A
1.5
A
0.8
A
0.9
W
150
°C
–55 to +150
°C
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