11N60C3(2005) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
| 11N60C3 Datasheet PDF : 0 Pages | |||
SPP11N60C3
SPI11N60C3, SPA11N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
• Periodic avalanche rated
PG-TO220-3-31 PG-TO262-3
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
23
1
P-TO220-3-31
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
650 V
0.38 Ω
11 A
PG-TO220
Type
SPP11N60C3
SPI11N60C3
SPA11N60C3
Package
Ordering Code
PG-TO220-3 Q67040-S4395
PG-TO262-3 Q67042-S4403
PG-TO220-3-31 SP000216312
Marking
11N60C3
11N60C3
11N60C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 7)
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPP_I
SPA
11
111)
7
71)
33
33
340
340
0.6
0.6
11
11
±20
±20
±30
±30
125
33
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 2.6
Page 1
2005-09-21
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