STF3NK80Z(2003) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STF3NK80Z
(Rev.:2003)

N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET

STMicroelectronics 

STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max.

V(BR)DSS Drain-source

ID = 1 mA, VGS = 0

800

Breakdown Voltage

IDSS

Zero Gate Voltage

VDS = Max Rating

1

Drain Current (VGS = 0)

VDS = Max Rating, TC = 125 °C

50

IGSS

Gate-body Leakage

VGS = ± 20V

±10

Current (VDS = 0)

VGS(th) Gate Threshold Voltage

VDS = VGS, ID = 50 µA

3

3.75

4.5

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 1.25 A

3.8

4.5

DYNAMIC

Symbol

gfs (1)

Ciss

Coss

Crss

Coss eq. (3)

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Equivalent Output

Capacitance

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Test Conditions

VDS = 15 V, ID = 1.25 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

VGS = 0V, VDS = 0V to 640V

VDD = 400 V, ID = 1.25 A

RG = 4.7Ω VGS = 10 V

(Resistive Load see, Figure 3)

VDD = 640 V, ID = 2.5 A,

VGS = 10 V

Typ.

2.1

485

57

11

22

17

27

36

40

19

3.2

10.8

Max.

Unit

V

µA

µA

µA

V

Ω

Unit

S

pF

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

2.5

A

10

A

VSD (1) Forward On Voltage

ISD = 2.5 A, VGS = 0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 2.5 A, di/dt = 100 A/µs

VDD = 50 V, Tj = 25°C

(see test circuit, Figure 5)

384

ns

1600

nC

8.4

A

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 2.5 A, di/dt = 100 A/µs

VDD = 50 V, Tj = 150°C

(see test circuit, Figure 5)

474

ns

2100

nC

8.8

A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

3/13

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