BF324 Ver la hoja de datos (PDF) - Philips Electronics
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BF324 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium frequency transistor
Product specification
BF324
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VBE
base-emitter voltage
Crb
feedback capacitance
fT
transition frequency
CONDITIONS
IE = 0; VCB = −30 V
IC = 0; VEB = −4 V
VCE = −10 V
IC = −1 mA
IC = −4 mA
IC = −4 mA; VCE = −10 V
IC = 0; VCE = −10 V; f = 1 MHz
VCE = −10 V; f = 100 MHz
IC = −1 mA
IC = −4 mA
IC = −8 mA
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
−30
−30
−4
−25
−25
300
+150
150
+150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
VALUE
420
UNIT
K/W
MIN.
−
−
TYP.
−
−
MAX.
−50
−100
UNIT
nA
nA
−
45
−
25
−
−
−
760 −
mV
−
−
0.3
pF
−
350 −
400 450 −
−
440 −
MHz
MHz
MHz
1997 Jul 07
3
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