BAT54AW Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza

componentes Descripción

Fabricante

BAT54AW

Schottky barrier diodes

NXP Semiconductors. 

NXP Semiconductors

BAT54W series

Schottky barrier diodes

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Per diode

VR

reverse voltage

-

IF

forward current

-

IFRM

repetitive peak forward tp  1 s;   0.5

current

IFSM

non-repetitive peak

square wave;

[1] -

forward current

tp < 10 ms

Per device; one diode loaded

Ptot

Tj

Tamb

Tstg

total power dissipation

junction temperature

ambient temperature

storage temperature

Tamb  25 C

[2] -

-

55

65

Max Unit

30

V

200

mA

300

mA

600

mA

200

mW

150

C

+150 C

+150 C

[1] Tj = 25 C before surge.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter

Per device; one diode loaded

Rth(j-a)

thermal resistance from

junction to ambient

Conditions

in free air

Min Typ Max Unit

[1] -

-

625 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

BAT54W_SER

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 3 — 20 November 2012

© NXP B.V. 2012. All rights reserved.

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