BAT54AW Ver la hoja de datos (PDF) - NXP Semiconductors.

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Fabricante

BAT54AW

Schottky barrier diodes

NXP Semiconductors. 

BAT54W series

Schottky barrier diodes

Rev. 3 — 20 November 2012

Product data sheet

1. Product profile

1.1 General description

Planar Schottky barrier diodes with an integrated guard ring for stress protection,

encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic

package.

1.2 Features and benefits

 Low forward voltage

 Low capacitance

 AEC-Q101 qualified

1.3 Applications

 Ultra high-speed switching

 Line termination

 Voltage clamping

 Reverse polarity protection

1.4 Quick reference data

Table 1. Quick reference data

Tamb = 25 C unless otherwise specified.

Symbol Parameter

Conditions

Per diode

VR

reverse voltage

VF

forward voltage

IF = 100 mA

IR

reverse current

VR = 25 V

[1] Pulse test: tp  300 s;   0.02.

2. Pinning information

Min Typ Max Unit

-

-

30

V

[1] -

-

800 mV

[1] -

-

2

A

Table 2. Pinning

Pin

Description

BAT54W

1

anode

2

not connected

3

cathode

Simplified outline Graphic symbol

3

1

2

3

1

2

n.c.

006aaa436

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