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BT131 Ver la hoja de datos (PDF) - NXP Semiconductors.

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componentes Descripción
Fabricante
BT131
NXP
NXP Semiconductors. NXP
BT131 Datasheet PDF : 13 Pages
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NXP Semiconductors
BT131 series
Triacs logic level
3. Ordering information
Table 2. Ordering information
Type number
Package
Name Description
BT131-600
TO-92 plastic single-ended leaded (through hole) package; 3 leads
BT131-800
4. Limiting values
Version
SOT54
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
BT131-600
BT131-800
IT(RMS)
RMS on-state current
all conduction angles;
Tlead = 51.2 C;
see Figure 1, 4 and 5
ITSM
non-repetitive peak on-state
half sine wave; Tj = 25 C
current
prior to surge; see Figure 2
and 3
t = 20 ms
t = 16.7 ms
I2t
I2t for fusing
t = 10 ms
dIT/dt
rate of rise of on-state current
ITM = 1.5 A; IG = 20 mA;
dIG/dt = 200 mA/s
T2+ G+
T2+ G
T2G
T2G+
IGM
PGM
PG(AV)
Tstg
Tj
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
Min
[1] -
-
-
-
-
-
-
-
-
-
-
-
-
40
-
Max
Unit
600
V
800
V
1
A
12.5
A
13.8
A
1.28
A2s
50
50
50
10
2
5
0.1
+150
125
A/s
A/s
A/s
A/s
A
W
W
C
C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 3 A/s.
BT131_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 9 November 2011
© NXP B.V. 2011. All rights reserved.
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