MPSA43 Ver la hoja de datos (PDF) - NXP Semiconductors.
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MPSA43 Datasheet PDF : 6 Pages
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NXP Semiconductors
NPN high-voltage transistors
Product data sheet
MPSA42; MPSA43
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
MPSA42
MPSA43
IEBO
emitter-base cut-off current
MPSA42
MPSA43
hFE
DC current gain
VCEsat
VBEsat
Cc
fT
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
MPSA42
MPSA43
transition frequency
CONDITIONS
MIN.
VCB = 200 V; IE = 0 A
−
VCB = 160 V; IE = 0 A
−
VEB = 6 V; IC = 0 A
−
VEB = 4 V; IC = 0 A
−
VCE = 10 V; note 1
IC = 1 mA
25
IC = 10 mA
40
IC = 30 mA
40
IC = 20 mA; IB = 2 mA; note 1
−
IC = 20 mA; IB = 2 mA; note 1
−
VCB = 20 V; IE = ie = 0 A; f = 1 MHz
−
−
VCE = 20 V; IC = 10 mA; f = 100 MHz 50
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
100
100
100
100
−
−
−
500
900
3
4
−
UNIT
nA
nA
nA
nA
mV
mV
pF
pF
MHz
2004 Oct 11
3
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