BAV20 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza

componentes Descripción

Fabricante

BAV20

General purpose diodes

NXP Semiconductors. 

NXP Semiconductors

General purpose diodes

Product data sheet

BAV20; BAV21

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

CONDITIONS

MIN.

see Fig.3

IF = 100 mA

−

IF = 200 mA

−

see Fig.5

VR = VRmax

−

VR = VRmax; Tj = 150 °C

−

f = 1 MHz; VR = 0; see Fig.6

−

when switched from IF = 30 mA to −

IR = 30 mA; RL = 100 Ω; measured

at IR = 3 mA; see Fig.8

MAX. UNIT

1.0

V

1.25

V

100

nA

100

μA

5

pF

50

ns

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point lead length 10 mm

thermal resistance from junction to ambient lead length 10 mm; note 1

Note

1. Device mounted on a printed circuit-board without metallization pad.

VALUE

240

375

UNIT

K/W

K/W

1999 May 25

4

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