NXP Semiconductors
NPN 1 GHz wideband transistor
Product specification
BFS17
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point up to Ts = 70 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
VALUE
260
UNIT
K/W
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
fT
transition frequency
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
F
noise figure
CONDITIONS
IE = 0; VCB = 10 V
IC = 2 mA; VCE = 1 V
IC = 25 mA; VCE = 1 V
IC = 2 mA; VCE = 5 V; f = 500 MHz
IC = 25 mA; VCE = 5 V; f = 500 MHz
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 1 mA; VCE = 5 V; f = 1 MHz
IC = 2 mA; VCE = 5 V; RS = 50 ;
f = 500 MHz
MIN.
25
25
TYP.
90
90
1
1.6
0.8
0.65
4.5
MAX. UNIT
10
nA
GHz
GHz
1.5 pF
2
pF
pF
dB
September 1995
3