BAS19 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza

componentes Descripción

Fabricante

BAS19

General purpose diodes

NXP Semiconductors. 

NXP Semiconductors

General purpose diodes

Product data sheet

BAS19; BAS20; BAS21

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

BAS19

BAS20

BAS21

Cd

diode capacitance

trr

reverse recovery time

CONDITIONS

see Fig.3

IF = 100 mA

IF = 200 mA

see Fig.5

VR = 100 V

VR = 100 V; Tj = 150 °C

VR = 150 V

VR = 150 V; Tj = 150 °C

VR = 200 V

VR = 200 V; Tj = 150 °C

f = 1 MHz; VR = 0; see Fig.6

when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω; measured at

IR = 3 mA; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient note 1

Note

1. Device mounted on an FR4 printed-circuit board.

CONDITIONS

MAX. UNIT

1

V

1.25

V

100

nA

100

µA

100

nA

100

µA

100

nA

100

µA

5

pF

50

ns

VALUE

330

500

UNIT

K/W

K/W

2003 Mar 20

4

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