BRY61 Ver la hoja de datos (PDF) - Philips Electronics
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BRY61 Datasheet PDF : 8 Pages
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Philips Semiconductors
Programmable unijunction transistor
Product specification
BRY61
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IP
IV
Voffset
IGAO
IGKS
VAK
VOM
tr
peak point current
VS = 10 V; RG = 10 kΩ; (see Fig.7) −
valley point current
VS = 10 V; RG = 100 kΩ; (see Fig.7) −
VS = 10 V; RG = 10 kΩ; (see Fig.7) 2
VS = 10 V; RG = 100 kΩ; (see Fig.7) 1
offset voltage
typical curve; IA = 0; (see Fig.7)
−
gate-anode leakage current IK = 0; VGA = 70 V; (see Fig.5)
−
gate-cathode leakage current VAK = 0; VKG = 70 V; (see Fig.6)
−
anode-cathode voltage
IA = 100 mA
−
peak output voltage
VAA = 20 V; C = 10 nF;
6
(see Figs 8 and 9)
rise time
VAA = 20 V; C = 10 nF; (see Fig.9) −
−
0.2 µA
−
0.06 µA
−
−
µA
−
−
µA
VP − VS −
V
−
10 nA
−
100 nA
−
1.4 V
−
−
V
−
80 ns
handbook, full pagewidth
+40 V
BZY88-
C8V2
5 kΩ
100 µF
BY206
750
(2x)
Ω
A
R1
40 K
RG
1 nF
D.U.T
10 kΩ
20 Ω
osc.
VS
MBK189
IP and IV determined by value of R1.
R1 = I-1-A-- ; i.e. maximum voltage drop over R1 = 1 V.
Internal resistance of oscilloscope = 10 MΩ.
Fig.2 Measuring circuit for peak and valley point currents.
1999 Apr 27
3
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