Philips Semiconductors
Programmable unijunction transistor
Product specification
BRY61
DESCRIPTION
Planar PNPN trigger device in a
SOT23 plastic package.
APPLICATIONS
• Switching applications such as:
– Motor control
– Oscillators
– Relay replacement
– Timers
– Pulse shapers, etc.
PINNING
PIN
1
2
3
anode
cathode
gate
DESCRIPTION
handbook, 2 columns
3 handbook, halfpage
anode
a
g
gate
MARKING
TYPE
NUMBER
BRY61
MARKING
CODE(1)
A5∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
1
Top view
2
MGC421
k
cathode MGL167
Fig.1 Simplified outline SOT23 and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VGA
IA(AV)
IARM
IASM
dlA/dt
Ptot
Tstg
Tj
Tamb
gate-anode voltage
average anode current
repetitive peak anode current
tp = 10 µs; δ = 0.01
non-repetitive peak anode current tp = 10 µs
rate of rise of anode current
1A ≤ 2.5 A
total power dissipation
Tamb ≤ 25 °C
storage temperature
junction temperature
operating ambient temperature
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
70
175
2.5
3
20
250
+150
150
+150
UNIT
V
mA
A
A
A/µs
mW
°C
°C
°C
1999 Apr 27
2