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BTA204W-600E,135 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza
componentes Descripción
Fabricante
BTA204W-600E,135
NXP
NXP Semiconductors. NXP
BTA204W-600E,135 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NXP Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA204W series D, E and F
GENERAL DESCRIPTION
Passivated guaranteed commutation
triacs in a plastic envelope suitable for
surface mounting, intended for use in
motor control circuits or with other
highly inductive loads. These devices
balance the requirements of
commutation performance and gate
sensitivity. The "sensitive gate" E
series and "logic level" D series are
intended for interfacing with low power
drivers, including micro controllers.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM
IITT(SRMMS)
BTA204W- 500D 600D -
BTA204W- 500E 600E 800E
BTA204W- 500F 600F 800F
Repetitive peak
500 600 800 V
off-state voltages
RMS on-state current
1
1
1
A
Non-repetitive peak on-state 10 10 10 A
current
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1 main terminal 1
2 main terminal 2
4
T2
T1
3 gate
tab main terminal 2
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
Repetitive peak off-state
voltages
-500
-
5001
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
fTuslpl
108 ˚C
sine wave;
sTuj =rg2e5 ˚C prior to
-
t = 20 ms
-
t = 16.7 ms
-
I2t
I2t for fusing
t = 10 ms
-
dIT/dt
IVPPGGGGMMM(AV)
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
dIITGIMG=/=d0t1.=2.50AA.;2; A/µs
over any 20 ms
period
-
-
-
-
TTsj tg
Storage temperature
Operating junction
temperature
-40
-
MAX.
-600
6001
1
10
11
0.5
100
2
5
5
0.5
150
125
UNIT
-800
800
V
A
A
A
A2s
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998
2
Rev 1.000

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