Marking Information
BAS40/ -04/ -05/ -06
Shanghai A/T Site
Chengdu A/T Site
xxx = Product Type Marking Code
K43 = BAS40
K44 = BAS40-04
K45 = BAS40-05
K46 = BAS40-06
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year 1999
Code
K
2000
L
2001
M
Month
Jan
Feb
Code
1
2
2002
N
Mar
3
2003 2004 2005
P
R
S
Apr
May
4
5
2006 2007 2008
T
U
V
Jun
Jul
6
7
2009 2010 2011
W
X
Y
Aug
Sep
8
9
2012
Z
Oct
O
2013 2014 2015
A
B
C
Nov
Dec
N
D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 6)
Forward Surge Current (Note 6)
@ t < 1.0s
Symbol
VRRM
VRWM
VR
IFM
IFSM
Value
40
200
600
Unit
V
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient Air (Note 6)
Operating Temperature Range
Storage Temperature Range
Symbol
PD
RJA
TJ
TSTG
Value
350
357
-55 to +125
-65 to +150
Unit
mW
°C/W
°C
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Forward Voltage
Reverse Leakage Current (Note 7)
Total Capacitance
Reverse Recovery Time
Symbol Min Typ
V(BR)R
40
VF
IR
20
CT
4.0
trr
Max
380
1000
200
5.0
5.0
Unit
Test Condition
V IR = 10µA
mV
tp < 300µs, IF = 1.0mA
tp < 300µs, IF = 40mA
nA tp < 300µs, VR = 30V
pF VR = 0V, f =1.0MHz
ns
IF = IR = 10mA to IR = 1.0mA,
RL = 100Ω
Notes:
6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
7. Short duration pulse test used to minimize self-heating effect.
BAS40/ -04/ -05/ -06
Document number: DS11006 Rev. 25 - 2
2 of 5
www.diodes.com
December 2013
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