C004B Ver la hoja de datos (PDF) - Toshiba

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Fabricante

C004B

Bipolar Transistors Silicon NPN Epitaxial Type / High collector voltage: VCEO = 160V (min)

Toshiba 

5. Electrical Characteristics

5.1. Static Characteristics (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Test Condition

Min

Collector cut-off current

ICBO VCB = 160 V, IE = 0 A



Emitter cut-off current

IEBO

VEB = 6 V, IC = 0 A



Collector-emitter breakdown voltage

V(BR)CEO IC = 10 mA, IB = 0 A

160

DC current gain

hFE(1) VCE = 5 V, IC = 1 mA

80

hFE(2) VCE = 5 V, IC = 0.1 A

140

Collector-emitter saturation voltage

VCE(sat) IC = 0.5 A, IB = 50 mA



Base-emitter saturation voltage

VBE(sat) IC = 0.5 A, IB = 50 mA



5.2. Dynamic Characteristics (Ta = 25  unless otherwise specified)

Characteristics

Collector output capacitance

Transition frequency

6. Marking (Note)

Symbol

Test Condition

Min

Cob

VCB = 10 V, IC = 0 A, f = 1 MHz



fT

VCE = 10 V, IC = 100 mA



TTC004B

Typ. Max Unit



100

nA



100





V









280



0.5

V



1.3

V

Typ. Max Unit

12



pF

100

 MHz

Fig. 6.1 Marking

Note:

A line under a Lot No. identifies the indication of product Labels.

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product.

The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the

restriction of the use of certain hazardous substances in electrical and electronic equipment.

2

2013-09-11

Rev.1.0

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