2SK2828 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SK2828

Silicon N Channel MOS FET High Speed Power Switching / Vdss = 700V

Hitachi -> Renesas Electronics 

2SK2828

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Channel dissipation

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Channel temperature

Tch

Storage temperature

Tstg

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

Ratings

Unit

700

V

±30

V

12

A

48

A

12

A

175

W

150

°C

–55 to +150

°C

2

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