T1345 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

T1345

Power MOSFET

ON Semiconductor 

SFT1345

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=--1mA, VGS=0V

VDS=--100V, VGS=0V

VGS=±16V, VDS=0V

VDS=--10V, ID=--1mA

VDS=--10V, ID=--5.5A

ID=--5.5A, VGS=--10V

ID=--3A, VGS=--4.5V

ID=--3A, VGS=--4V

VDS=--20V, f=1MHz

See specified Test Circuit.

VDS=--50V, VGS=--10V, ID=--11A

IS=--11A, VGS=0V

Switching Time Test Circuit

VIN

0V

--10V

VIN

PW=10μs

D.C.≤1%

G

VDD= --50V

ID= --5.5A

RL=9.1Ω

D

VOUT

SFT1345

P.G

50Ω

S

Ratings

Unit

min

typ

max

--100

V

--1

μA

±10

μA

--1.2

--2.6

V

8.5

S

210

275 mΩ

225

315 mΩ

235

330 mΩ

1020

pF

72

pF

43

pF

9.5

ns

25

ns

105

ns

55

ns

21

nC

3.6

nC

4.5

nC

--0.93

--1.5

V

No.8987-2/9

Share Link: