FTP04N65 Ver la hoja de datos (PDF) - InPower Semiconductor

Número de pieza

componentes Descripción

Fabricante

FTP04N65

N-Channel MOSFET / Vdss = 650V, Id =4.0A / FTP04N65 TO-220, FTA04N65 TO-220F

InPower Semiconductor 

Figure 6. Maximum Peak Current Capability

100

TRANSCONDUCTANCE

MAY LIMIT CURRENT IN

THIS REGION

FOR TEMPERATURES

ABOVE 25 oC DERATE PEAK

CURRENT AS FOLLOWS:

I = I25

1----5---0----–-----T---C---

125

10

VGS = 10V

1

1E-6

10E-6

100E-6

1E-3

10E-3

tp, Pulse Width (s)

100E-3

1E+0

10E+0

Figure 7. Typical Transfer Characteristics

12 PULSE DURATION = 250 µs

DUTY CYCLE = 0.5% MAX

10 VDS = 10 V

8

6

4

+150 oC

2

+25 oC

-55 oC

0

2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

VGS, Gate-to-Source Voltage (V)

100.0

Figure8. Unclamped Inductive

Switching Capability

10.0

STARTING TJ = 150 oC

1.0

STARTING TJ = 25 oC

If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)

If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]

R equals total Series resistance of Drain circuit

0.1

1E-6

10E-6 100E-6 1E-3

10E-3

tAV, Time in Avalanche (s)

100E-3

Figure 9. Typical Drain-to-Source ON

Resistance vs Drain Current

3.5

PULSE DURATION = 2 µs

DUTY CYCLE = 0.5% MAX

3.0 TC=25°C

2.5

2.0

VGS = 10V

VGS = 20V

1.5

1.0

0

2

4

6

8

10

12

ID, Drain Current (A)

©2006 InPower Semiconductor Co., Ltd.

Figure 10. Typical Drain-to-Source ON Resistance

vs Junction Temperature

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

-75 -50 -25 0

PULSE DURATION = 250 µs

DUTY CYCLE = 0.5% MAX

VGS = 10V, ID = 4.0A

25 50 75 100 125 150

TJ, Junction Temperature (oC)

FTP04N65/FTA04N65 REV. A. April. 2006

Page 5 of 9

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