FTP04N65 Ver la hoja de datos (PDF) - InPower Semiconductor
Número de pieza
componentes Descripción
Fabricante
FTP04N65
InPower Semiconductor
FTP04N65 Datasheet PDF : 9 Pages
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Duty Factor
1.000
50%
0.100
20%
10%
5%
2%
0.010 1%
single pulse
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
PDM
t1
t2
NOTES:
DUTY FACTOR: D=t1/t2
PEAK TJ=PDM x ZθJC x RθJC+TC
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
tp, Rectangular Pulse Duration (s)
1E+00
1E+01
Figure 2. Maximum Power Dissipation
vs Case Temperature
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature (oC)
Figure3. Maximum Continuous Drain Current
vs Case Temperature
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
TC, Case Temperature (oC)
Figure 4. Typical Output Characteristics
10
PULSE DURATION = 250 µS
9
DUTY FACTOR = 0.5% MAX
8
TC = 25 oC
7
6
5
4
3
2
1
0
0
5
10
15
VGS = 15V
VGS = 6.0V
VGS = 5.5V
VGS = 5.25V
VGS = 5.0V
VGS = 4.5V
20
25
30
VDS, Drain-to-Source Voltage (V)
Figure5. Typical Drain-to-Source ON Resistance
vs Gate Voltage and Drain Current
7
PULSE DURATION = 250 µS
DUTY FACTOR = 0.5% MAX
6
TC = 25 oC
5
ID = 4A
ID = 2A
4
3
2
1
4
5 6 7 8 9 10 11 12 13 14 15
VGS, Gate-to-Source Voltage (V)
©2006 InPower Semiconductor Co., Ltd.
FTP04N65/FTA04N65 REV. A. April. 2006
Page 4 of 9
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