FTA04N65 Ver la hoja de datos (PDF) - InPower Semiconductor
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componentes Descripción
Fabricante
FTA04N65
InPower Semiconductor
FTA04N65 Datasheet PDF : 9 Pages
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FTP04N65
FTA04N65
N-Channel MOSFET
Applications:
• Adaptor
• Charger
• SMPS Standby Power
• LCD Panel Power
Features:
• Lead Free
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP04N65
FTA04N65
PACKAGE
TO-220
TO-220F
VDSS
650V
RDS(ON) (Max.)
2.2 Ω
ID
4.0A
D
G
DS
G
DS
G
TO-220
TO-220F
BRAND
Not to Scale
Not to Scale
S
FTP04N65
FTA04N65
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP04N65 FTA04N65
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
650
4.0
4.0*
Figure 3
Figure 6
100
24
0.80
0.19
V
A
W
W/ oC
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=3.0 mH, ID=4.1 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30
250
Figure 8
3.0
V
mJ
V/ ns
Maximum Temperature for Soldering
TL
Leads at 0.063in (1.6mm) from Case for 10 seconds
300
oC
TPKG
Package Body for 10 seconds
260
TJ and TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
FTP04N65 FTA04N65
1.25
5.2
62
62
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2006 InPower Semiconductor Co., Ltd.
FTP04N65/FTA04N65 REV. A. April. 2006
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