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3S1265RD Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza
componentes Descripción
Fabricante
3S1265RD
Fairchild
Fairchild Semiconductor Fairchild
3S1265RD Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
KA3S1265R/KA3S1265RF/KA3S1265RD
Absolute Maximum Ratings
Characteristic
Maximum drain voltage (1)
Drain-gate voltage (RGS=1M)
Gate-source (GND) voltage
Drain current pulsed (2)
Single pulsed avalanche energy (3)
Continuous drain current (TC=25°C)
Continuous drain current (TC=100°C)
Maximum supply voltage
Input voltage range
Total power dissipation
Operating ambient temperature
Storage temperature
Symbol
VD,MAX
VDGR
VGS
IDM
EAS
ID
ID
VCC,MAX
VFB
PD
Derating
TA
TSTG
Note:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=10mH, VDD=50V, RG=27Ω, starting Tj=25 °C
Value
650
650
±30
48.0
785
12
8.4
30
0.3 to VSD
269
2.17
25 to +85
55 to +150
Unit
V
V
V
ADC
mJ
ADC
ADC
V
V
W
W/°C
°C
°C
2

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