Y60NM50 Ver la hoja de datos (PDF) - STMicroelectronics
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Y60NM50 Datasheet PDF : 8 Pages
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STY60NM50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.22
Rthj-amb Thermal Resistance Junction-ambient
Max
30
Tl
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
Max Value
30
1.4
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
500
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
10
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
100
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
± 10
°C/W
°C/W
°C
Unit
A
J
Unit
V
µA
µA
µA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 30A
Min.
3
Typ.
4
0.045
Max.
5
0.05
Unit
V
Ω
DYNAMIC
Symbol
Parameter
Test Conditions
gfs (1)
Ciss
Forward Transconductance
Input Capacitance
VDS > ID(on) x RDS(on)max,
ID = 30A
VDS = 25V, f = 1 MHz, VGS = 0
Coss
Crss
Output Capacitance
Reverse Transfer
Capacitance
RG
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
35
7500
980
200
1.5
Max.
Unit
S
pF
pF
pF
Ω
2/8
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