MMBT5551-7-F_14 Ver la hoja de datos (PDF) - Diodes Incorporated.
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MMBT5551-7-F_14 Datasheet PDF : 6 Pages
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MMBT5551
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 7)
DC Current Gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
Min
180
160
6.0
80
80
30
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
VBE(SAT)
Cobo
hfe
50
Current Gain-Bandwidth Product
fT
100
Noise Figure
nF
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
50
50
250
0.15
0.20
1.0
6.0
250
300
8.0
Unit
Test Condition
V IC = 100µA, IE = 0
V IC = 1.0mA, IB = 0
V IE = 10µA, IC = 0
nA VCB = 120V, IE = 0
µA VCB = 120V, IE = 0, TA = 100°C
nA VEB = 4.0V, IC = 0
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
pF
MHz
dB
VCB = 10V, f = 1.0MHz, IE = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 10V, IC = 10mA,
f = 100MHz
VCE = 5.0V, IC = 200µA,
RS = 1.0kΩ, f = 1.0kHz
MMBT5551
Document number: DS30061 Rev. 12 - 2
3 of 6
www.diodes.com
August 2014
© Diodes Incorporated
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