MMBT5551-7-F_14 Ver la hoja de datos (PDF) - Diodes Incorporated.
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MMBT5551-7-F_14 Datasheet PDF : 6 Pages
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MMBT5551
Absolute Maximum Ratings (@TA = +25°C unless otherwise specified)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Symbol
VCBO
VCEO
VEBO
IC
Value
180
160
6.0
600
Unit
V
V
V
mA
Thermal Characteristics (@TA = +25°C unless otherwise specified)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 5)
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
ESD Ratings (Note 6)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
400
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
MMBT5551
Document number: DS30061 Rev. 12 - 2
2 of 6
www.diodes.com
August 2014
© Diodes Incorporated
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