BDY26(2012) Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Fabricante
BDY26 Datasheet PDF : 3 Pages
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BDY26 – 183T2
BDY27 – 184T2
BDY28 – 185T2
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ MAx Unit
VCEO(BR)
V(BR)CBO
ICEO
IEBO
ICES
VCE(SAT)
VBE(SAT)
hFE
fT
td + tr
ts + tf
Collector-Emitter
Breakdown Voltage (*)
Collector-Base
Breakdown Voltage (*)
Collector-Emitter Cutoff
Current
Emitter-Base Cutoff
Current
Collector-Emitter Cutoff
Current
Collector-Emitter
saturation Voltage (*)
Base-Emitter saturation
Voltage (*)
DC Current Gain
Transition Frequency
Turn-on time
Turn-off time
BDY26, 183T2
180 - -
IC=50 mA
IB=0
BDY27, 184T2
200 -
BDY28A, 185T2A 250 -
BDY28B, 185T2B 250 -
-
-
-
V
BDY28C, 185T2C 220 - -
BDY26, 183T2
300 - -
IC=3 mA
BDY27, 184T2
400 - -
V
BDY28, 185T2
500 - -
VCE=180 V
VCE=200 V
VCE=250 V
VEB=10 V
VCE=250 V
VBE=0 V
VCE=300 V
VBE=0 V
VCE=400 V
VBE=0 V
IC=2.0 A
IB=0.25 A
BDY26
BDY27
BDY28
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
-
-
-
- 1.0 mA
-
-
-
- 1.0 mA
-
-
-
- 1.0 mA
-
-
-
-
-
- 0.6 V
-
-
IC=2.0 A
IB=0.25 A
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
-
-
-
- 1.2 V
-
-
VCE=4 V
IC=1 A
A
B
C
VCE=4 V
IC=2 A
A
B
C
VCE= 15 V, IC= 0.5 A, f= 10 MHz
IC= 5 A, IB= 1 A
IC= 5 A, IB1= 1 A, IB2= -0.5 A
- 55 -
- 65 -
- 90 -
15 20 45
-
30 45 90
75 82 180
10 - - MHz
- 0.3 0.5 µs
- 1.5 2.0 µs
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2%
2|3
24/09/2012
COMSET SEMICONDUCTORS
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