VIT3080C(2013) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

VIT3080C
(Rev.:2013)

Dual Trench MOS Barrier Schottky Rectifier

Vishay Semiconductors 

www.vishay.com

VT3080C, VIT3080C

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

Instantaneous forward voltage per diode

Reverse current per diode

IF = 5 A

IF = 7.5 A

IF = 15 A

IF = 5 A

IF = 7.5 A

IF = 15 A

VR = 80 V

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms

TA = 25 °C

TA = 125 °C

TA = 25 °C

TA = 125 °C

VF (1)

IR (2)

TYP.

0.52

0.58

0.75

0.46

0.52

0.65

30

20

MAX.

-

-

0.82

-

-

0.70

700

35

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT3080C

VIT3080C

per diode

2.5

Typical thermal resistance

RJC

per device

2.0

UNIT

V

μA

mA

UNIT

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

TO-220AB

VT3080C-M3/4W

1.89

TO-262AA

TO-220AB (1)

TO-262AA (1)

VIT3080C-M3/4W

VT3080CHM3/4W

VIT3080CHM3/4W

1.46

1.89

1.46

Note

(1) AEC-Q101 qualified

PACKAGE CODE

4W

4W

4W

4W

BASE QUANTITY

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50/tube

50/tube

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DELIVERY MODE

Tube

Tube

Tube

Tube

Revision: 25-Oct-13

2

Document Number: 89241

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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