GP1201FSS18 Ver la hoja de datos (PDF) - Dynex Semiconductor
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GP1201FSS18 Datasheet PDF : 9 Pages
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GP1201FSS18
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
tf
E
OFF
t
d(on)
t
r
EON
Q
rr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
I
rr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
IC = 1200A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 2.2Ω
L ~ 50nH
IF = 1200A, VR = 50% VCES,
dIF/dt = 4500A/µs
Min. Typ. Max. Units
-
1050 1250 ns
-
180 250 ns
-
850 1000 mJ
-
300 400 ns
-
250 400 ns
-
500 700 mJ
-
250 350 µC
-
500
-
A
-
180
-
mJ
Test Conditions
I = 1200A
C
V
GE
=
±15V
V = 900V
CE
RG(ON) = RG(OFF) = 2.2Ω
L ~ 50nH
I = 1200A, V = 50% V ,
F
R
CES
dI /dt
F
=
4000A/µs
Min. Typ. Max. Units
-
1150 1350 ns
-
200 350 ns
-
1150 1350 mJ
-
400 550 ns
-
300 450 ns
-
700 900 mJ
-
425 550 µC
-
600
-
A
-
250
-
mJ
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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