VBO105-08NO7 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
VBO105-08NO7 Datasheet PDF : 2 Pages
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VBO 105
200
A
160
I-I-FF-S(-MO-V-)
1.6
IFSM (A)
TVJ=45°C TVJ=150°C
1500
1350
5
10
2
As
1.4
T=150°C
120
1.2
80
40
T=25°C
IF
0
VF 1
1.5 V
Fig. 1 Forward current versus
voltage drop per diode
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
0
1
2
3
10
10 t[ms] 10
10
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
300
[W] PSB 105
250
200
150
100
50
PVTOT
0
50
IFAVM
TC
85
0.19 0.11 = RTHCA [K/W] 90
0.28
95
10 0
10 5
0.44
11 0
11 5
0.77
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.77
100 0
50
[A] Tamb
12 0
12 5
13 0
13 5
14 0
100
14 5
°C
15 0
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient temperature
4
10
TVJ=45°C
TVJ=150°C
3
10
1
2
4 6 10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode or thyristor
120
[A]
90
DC
sin.180°
rec.120°
rec.60°
rec.30°
60
30
IdAV
0
50 100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
F4
1.5
K/W
Z thJK
1
Z thJC
0.5
Zth
0.01
0.1 t[s] 1
10
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
IXYS reserves the right to change limits, test conditions and dimensions.
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