DCR1374SBA12 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DCR1374SBA12 Datasheet PDF : 8 Pages
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DCR1374SBA
10000
Conditions:
Tj = 125˚C
IT = 800A
VR = 100V
tp = 1ms - Trapezoidal
100
Table gives pulse power PGM in Watts
Pulse width Pulse frequency Hz
µs
50 100 400
100 150 150 150
200 150 150 125
500 150 150 100
10 1ms 150 100 25
10ms 20 -
-
5W10W20W 50W100W
1000
100
0.1
IT
QS
dI/dt
IRR
1.0
10
100
Rate of decay of on-state current dI/dt - (A/µs)
1
Upper limit 95%
VGD
0.1
0.001
Lower limit 5%
Region of certain
triggering
0.01
0.1
1
10
Gate trigger current IGT - (A)
Fig.4 Stored charge
Fig.5 Gate characteristics
100
0.1
I2t = Î2 x t
2
Anode side cooled
75
0.01
Double side cooled
50
8
7
6
25
I2t
5
4
3
0
1
10 1 2 3 4 5 10 20 30 50
ms
Cycles at 50Hz
Duration
Fig.6 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase 125˚C)
0.001
Conduction
Effective thermal resistance
Junction to case ˚C/W
Double side Anode side
d.c.
0.0130
0.0210
Halfwave 0.0141
0.0221
3 phase 120˚ 0.0170
0.0250
0.0001
0.001
0.01
6 phase 60˚ 0.0200
0.1
1
0.0280
10
100
Time - (s)
Fig.7 Maximum (limit) transient thermal impedance -
junction to case (˚C/W)
6/9
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