DCR1374SBA Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DCR1374SBA

Phase Control Thyristor

Dynex Semiconductor 

DCR1374SBA

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

IGT

VGD

V

FGM

VFGN

VRGM

I

FGM

PGM

PG(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Test Conditions

VDRM = 5V, Tcase = 25oC

V = 5V, T = 25oC

DRM

case

At VDRM Tcase = 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 5

-

Max.

3

350

0.25

30

0.25

5

30

150

10

Units

V

mA

V

V

V

V

A

W

W

CURVES

8000

7000

Measured under pulse conditions

Tj = 125˚C

6000

5000

4000

5000

4000

3000

3000

2000

2000

1000

0

0.5

1.0

1.5

2.0

Instantaneous on-state voltage, VT - (V)

Fig.2 Maximum (limit) on-state characteristics

1000

0

0

d.c.

Half wave

3 phase

6 phase

1000

2000

3000

Mean on-state current IT(AV) - (A)

4000

Fig.3 Power dissipation

VTM EQUATION

VTM = A + Bln (IT) + C.IT+D.√IT

Where

A = 0.4846543

B = 8.508026 x 10–5

C = 0.05408984

D = 1.863019 x 10–3

these values are valid for Tj = 125˚C for IT 500A to 8000A

5/9

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