DCR1374SBA08 Ver la hoja de datos (PDF) - Dynex Semiconductor

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Fabricante

DCR1374SBA08

Phase Control Thyristor

Dynex Semiconductor 

DCR1374SBA

SURGE RATINGS

Symbol

Parameter

IRRM/IRRM

dV/dt

Peak reverse and off-state current

Max. linear rate of rise of off-state voltage

dI/dt

Rate of rise of on-state current

VT(TO)

rT

t

gd

Threshold voltage

On-state slope resistance

Delay time

t

Turn-off time

q

IL

Latching current

I

Holding current

H

Note 1: Typical value

Test Conditions

Min. Max. Units

At VRRM/VDRM, Tcase = 125˚C

-

To 67% V , T = 125˚C

-

DRM j

From 67% VDRM to 4600A Repetitive 50Hz -

Gate source 20V, 20Ω, Non-repetitive

-

150 mA

1000 V/µs

500 A/µs

1000 A/µs

tr ≤ 0.5µs, Tj = 125˚C

At T = 125˚C

vj

At Tvj = 125˚C

VD = 67% VDRM, gate source 30V, 15Ω

tr = 0.5µs, Tj = 25˚C

I = 800A, t = 1ms, T =125˚C,

T

p

j

VR = 50V, dIRR/dt = 20A/µs,

VDR = 67% VDRM,

dV /dt

DR

=

20V/µs

linear

Tj = 25˚C, VD = 10V

Tj = 25˚C, VG–K = ∞

-

0.92 V

- 0.119 mΩ

-

1.5 ns

3001

µs

-

350 mA

-

175 mA

4/9

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