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DCR1374SBA18 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza
componentes Descripción
Fabricante
DCR1374SBA18
Dynex
Dynex Semiconductor Dynex
DCR1374SBA18 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DCR1374SBA
SURGE RATINGS
Symbol
Parameter
ITSM
Surge (non-repetitive) on-state current
I2t
I2t for fusing
ITSM
Surge (non-repetitive) on-state current
I2t
I2t for fusing
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
Rth(c-h)
Thermal resistance - case to heatsink
T
Virtual junction temperature
vj
Tstg
Storage temperature range
Fm
Clamping force
Test Conditions
10ms half sine, Tcase = 125˚C
V = 50% V - 1/4 sine
R
RRM
10ms half sine, Tcase = 125˚C
VR = 0
Max. Units
40
kA
8 x 106
A2s
50
kA
12.5 x 106 A2s
Test Conditions
Double side cooled
DC
Single side cooled
Anode DC
Cathode DC
Clamping force 40.0kN
Double side
(with mounting compound) Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
- 0.013 ˚CW
- 0.021 ˚CW
- 0.034 ˚CW
- 0.003 ˚CW
- 0.006 ˚CW
-
135 ˚C
-
125 ˚C
–55 125 ˚C
36.0 44.0 kN
3/9
www.dynexsemi.com

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