GP201MHS18 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
GP201MHS18 Datasheet PDF : 10 Pages
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GP201MHS18
50
VGE = ±15V
45 VCE = 900V
40
Tcase = 125˚C
35
Tcase = 25˚C
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175 200
Collector current, IT - (A)
600
td(off)
500
td(on)
400
300
tf
200
100
tr
Tcase = 125˚C
VGE = ±15V
VCE = 900V
Rg = 4.7Ω
0
0 20 40 60 80 100 120 140 160 180 200
Collector current, IC - (A)
Fig. 7 Typical diode turn-off energy vs collector current
Fig. 7 Typical diode reverse recovery charge vs collector current
400
350
Tj = 25˚C
300
250
Tj = 125˚C
200
150
100
50
0
0
0.5
1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig. 9 Diode typical forward characteristics
500
450
400
350
300
250
200
150
100
Tcase = 125˚C
Vge = ±15V
50 Rg(min) = 4.7Ω
Rg(min) : Minimum recommended value
0
0
400
800
1200
1600
Collector-emitter voltage, Vce - (V)
2000
Fig. 10 Reverse bias safe operating area
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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