GP201MHS18 Ver la hoja de datos (PDF) - Dynex Semiconductor
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GP201MHS18 Datasheet PDF : 10 Pages
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GP201MHS18
TYPICAL CHARACTERISTICS
400
Common emitter
Tcase = 25˚C
350
Vge = 20/15/12/10V
300
250
200
150
100
50
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
400
Common emitter
Tcase = 125˚C
350
Vge = 20/15/12/10V
300
250
200
150
100
50
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
180
Tcase = 125˚C
160
VGE = ±15V
VCE = 900V
A
140
B
120
100
C
80
60
40
A: Rg = 10Ω
20
B: Rg = 6.2Ω
C: Rg = 4.7Ω
0
0 20 40 60 80 100 120 140 160 180 200
Collector current, IC - (A)
Fig. 5 Typical turn-on energy vs collector current
160
Tcase = 125˚C
VGE = ±15V
140 VCE = 900V
A
120
B
C
100
80
60
40
20
A: Rg = 10Ω
B: Rg = 6.2Ω
C: Rg = 4.7Ω
0
0 20 40 60 80 100 120 140 160 180 200
Collector current, IC - (A)
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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