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TZA3026 Ver la hoja de datos (PDF) - NXP Semiconductors.

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TZA3026 Datasheet PDF : 15 Pages
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Philips Semiconductors
TZA3026
SDH/SONET STM4/OC12 transimpedance amplifier
Table 4: Characteristics …continued
Typical values at Tj = 25 °C and VCC = 3.3 V; minimum and maximum values are valid over the entire ambient temperature
range and supply voltage range; all voltages are measured with respect to ground; unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ
Max
Unit
Bias voltage: pad DREF
RDREF
resistance between pad
DREF and pad VCC
TCRDREF
temperature coefficient
RDREF
Input: pad IPHOTO
tested at DC level;
Tamb = 25 °C
250 300
350
-
0.33
-
/°C
IPD(p-p)
input current (peak-to-peak
value)
[2] 1500 -
+1500 µA
Vbias
input bias voltage
Monitor: pad IDREF_MON
700 850
1000
mV
VMON
AMON
IMON(offset)
TCMON(offset)
monitor voltage
monitor current ratio
monitor offset current
temperature coefficient
monitor offset current
ratio IDREF_MON / IDREF
Tamb = 25 °C
[1] 0
-
19.5 20
0
10
-
30
VCC 0.4 V
20.5
%
20
µA
-
nA/°C
Data outputs: pads OUT and OUTQ
Vo(cm)
common mode output
AC-coupled; RL(dif) = 100
-
VCC 1.2 -
V
voltage
Vo(dif)(p-p)
RO(dif)
differential load output
voltage (peak-to-peak
value)
differential output
resistance
AC-coupled; RL(dif) = 100
IPD = 0.84 µA (p-p) × Rtr
IPD = 100 µA (p-p)
IPD = 1500 µA (p-p)
tested at DC level
8
12
-
mV
-
125
-
mV
-
250
500
mV
-
100
-
tr
rise time
20 % to 80 %;
-
300
-
ps
IPD = 100 µA(p-p)
tf
fall time
80 % to 20 %;
IPD = 100 µA (p-p)
-
300
-
ps
[1] Guaranteed by design.
[2] The input current range is determined by the allowed Pulse Width Distortion (PWD), which is <5 % over the whole input current range.
The PWD is defined as:
PWD
=
-p---u----l--s--e--T---w-----i--d---t--h-
( 0.5 )
×
100
%
,
where
T
is
the
clock
period.
9397 750 14763
Product data sheet
Rev. 01 — 2 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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