GP200MHS18 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
GP200MHS18 Datasheet PDF : 10 Pages
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GP200MHS18
100
Tcase = 25˚C
90 VGE = ±15V
VCE = 900V
A
80
70
B
60
50
C
40
30
20
A: Rg = 15Ω
10
B: Rg = 10Ω
C: Rg = 4.7Ω
0
0
50
100
150
200
Collector current, IC - (A)
Fig. 7 Typical turn-off energy vs collector current
240
Tcase = 125˚C
220 VGE = ±15V
200 VCE = 900V
180
A
160
140
B
120
100
C
80
60
40
A: Rg = 15Ω
20
B: Rg = 10Ω
C: Rg = 4.7Ω
0
0
50
100
150
200
Collector current, IC - (A)
Fig. 8 Typical turn-off energy vs collector current
30
VGE = ±15V
VCE = 900V
25
20
Tcase = 125˚C
15
Tcase = 25˚C
10
5
0
0 25 50 75 100 125 150 175 200
Collector current, IT - (A)
Fig. 9 Typical diode turn-off energy vs collector current
2400
2200
2000
1800
Tcase = 125˚C
VGE = ±15V
VCE = 900V
Rg = 4.7Ω
1600
1400
tf
1200
1000
800
td(off)
600 td(on)
400
200
0
0
tr
20 40 60 80 100 120 140 160 180 200
Collector current, IC - (A)
Typical switching times vs collector current
Fig. 10 Typical switching characteristics vs collector current
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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