MP03HBN360-14 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

MP03HBN360-14

Dual Thyristor, Thyristor/Diode Module

Dynex Semiconductor 

MP03XXX360

1600

20

Measured under pulse conditions

1400 Tj = 135˚C

I2t = Î2 x t

2

1200

15

1000

800

10

200

600

400

5

I2t

175

200

0

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Instantaneous on-state voltage, VT - (V)

Fig. 3 Maximum (limit) on-state characteristics

0

150

1

10 1 2 3 4 5 10 20 30 50

ms

Cycles at 50Hz

Duration

Fig. 4 Surge (non-repetitive) on-state current vs time

(with 50% VRSM at Tcase = 130˚C)

100

0.15

Pulse width Frequency Hz

µs 50 100 400

20 100 100 100

25 100 100 100

Table gives pulse pow50e7W5r1W0P0WGM in Watts

VFGM

100 100 100 100

500 100 100 25

5W10W

d.c.

10

1ms 100 50 -

10ms 10 - -

0.10

Tj = 25˚C

Region of

certain

triggering

1

0.05

0.1

0.001

0.01

0.1

0.1

IGD Gate trigger current, IGT - (A)

10

IFGM

Fig. 5 Gate characteristics

0

0.001

0.01

0.1

1.0

10

100

Time - (s)

Fig. 6 Transient thermal impedance - dc

4/9

www.dynexsemi.com

Share Link: