MP03HBP360-12(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

MP03HBP360-12
(Rev.:2002)

Dual Thyristor, Thyristor/Diode Module

Dynex Semiconductor 

MP03XXX360

1600

Measured under pulse conditions

Tj = 125˚C

1200

800

400

0

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Instantaneous on-state voltage, VT - (V)

Fig. 3 Maximum (limit) on-state characteristics

100 Table gives pulse power PGM in Watts

Pulse Width

Frequency Hz

µs

20

25

100

500

1ms

10ms

10

50 100 400

100 100 100

100 100 100

100 100 100

100 100

25

100 50

-

10

-

-

20

I2t = Î2 x t

2

15

500

450

10

400

350

I2t

300

5

250

200

0

150

1

10 1 2 3 45

50

ms

Cycles at 50Hz

Duration

Fig. 4 Surge (non-repetitive) on-state current vs time

(Thyristor or diode with 50% VRRM at Tcase = 130˚C)

0.15

d.c.

0.10

Upper

limit 99% Tj =

Tj = 125˚C

25˚C

1.0

0.05

Lower limit 1%

0.1

0.001

0.01

0.1

0.1

10

Gate trigger current, IGT - (A)

Fig. 5 Gate characteristics

0

0.001

0.01

0.1

1.0

10

100

Time - (s)

Fig. 6 Transient thermal impedance - dc

4/8

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