MP03TT580-XXW4 Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

MP03TT580-XXW4

Dual Thyristor Water Cooled Welding Module

Dynex Semiconductor 

MP03TT580

2000

20

Measured under pulse conditions

1500

15

180

1000

10

I2t

140

Tj = 125˚C

500

5

100

0

0.5

1.0

1.5

2.0

2.5

Instantaneous on-state voltage, VT - (V)

Fig. 3 Maximum (limit) on-state characteristics

100

Pulse width Frequency Hz Table gives pulse power PGM in Watts

µs 50 100 400

VFGM

20 100 100 100

25 100 100 100

100 100 100 100

75W 100W

50W

500 100 100 25

10 1ms 100 50 -

10ms 10 - -

10W

5W

Tj = 25˚C

Tj = 125˚C

1.0

Upper limit 99%

VGD

Lower limit 1%

0.1

0.001

0.01

0.1

1.0

Gate trigger current, IGT - (A)

10

IFGM

Fig. 5 Gate characteristics

0

60

1

10 1 2 3 4 5 10 20 30 50

ms

cycles at 50Hz

Duration

Fig. 4 Surge (non-repetitive) on-state current vs time

(with 50% VRSM at Tcase = 125˚C)

0.25

0.20

0.15

0.10

0.05

0

0.001 0.01

0.1

1

10

Time (Seconds)

100 1000

Fig. 6 Transient thermal impedance - dc

4/9

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