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MP03TT580-16-W1 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza
componentes Descripción
Fabricante
MP03TT580-16-W1
Dynex
Dynex Semiconductor Dynex
MP03TT580-16-W1 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MP03TT580
ABSOLUTE MAXIMUM CURRENT RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
Parameter
Test Conditions
ILINE
Max. controllable RMS line
Continuous 50/60Hz
Twater (in) = 25˚C
current - single phase
4.5 Ltr/min
Twater (in) = 40˚C
20 cycles, 50% duty cycle
Twater (in) = 25˚C
4.5 Ltr/min
Twater (in) = 40˚C
ITSM
Surge (non-repetitive) on-current
10ms half sine, T = 125˚C
j
I2t
I2t for fusing
VR = 0
I
Surge (non-repetitive) on-current
TSM
10ms half sine, Tj = 125˚C
I2t
I2t for fusing
VR = 50% VDRM
Visol
Isolation voltage
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Max. Units
600
A
530
A
1186
A
1008
A
6.8
kA
231x103 A2s
5.5
kA
150x103 A2s
3000
V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Rth(j-w)
Thermal resistance - junction to water
(per thyristor)
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-
Screw torque
-
Weight (nominal)
Test Conditions
dc, 4.5 Ltr/min
Half wave, 4.5 Ltr/min
3 Phase, 4.5 Ltr/min
Reverse (blocking)
-
Mounting - M6
Electrical connections - M4
-
Min. Max. Units
-
0.24 ˚C/kW
-
0.25 ˚C/kW
-
0.26 ˚C/kW
-
125
˚C
40 125
˚C
5(44) - Nm (lb.ins)
8(70) 9(80) Nm (lb.ins)
- Refer to g
drawings
2/9
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