GP400DDS18 Ver la hoja de datos (PDF) - Dynex Semiconductor
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GP400DDS18 Datasheet PDF : 11 Pages
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GP400DDS18
TYPICAL CHARACTERISTICS
800
Common emitter
700 Tcase = 25˚C
Vge = 20/15/12V
600
Vge = 10V
500
400
300
200
100
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
800
Common emitter
Tcase = 125˚C
700
Vge = 20/15/12V
600
Vge = 10V
500
400
300
200
100
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
400
Tcase = 25˚C
360 VGE = ±15V
VCE = 900V
320
280
240
A
200
B
160
C
120
80
A: Rg = 4.7Ω
40
B: Rg = 3.3Ω
C: Rg = 2.2Ω
0
0 50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig. 5 Typical turn-off energy vs collector current
300
280
Tcase = 125˚C
VGE = ±15V
260 VCE = 900V
240
220
A
200
B
180
160
C
140
120
100
80
60
40
A: Rg = 4.7Ω
B: Rg = 3.3Ω
20
C: Rg = 2.2Ω
0
0 50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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