GP400DDS18 Ver la hoja de datos (PDF) - Dynex Semiconductor
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GP400DDS18 Datasheet PDF : 11 Pages
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GP400DDS18
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
t
d(off)
t
f
E
OFF
td(on)
tr
EON
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
T = 125˚C unless stated otherwise
case
Symbol
Parameter
td(off)
tf
EOFF
t
d(on)
t
r
E
ON
Qrr
I
rr
E
REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
IC = 400A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 2.2Ω
L ~ 100nH
I = 400A, V = 50% V ,
F
R
CES
dIF/dt = 3000A/µs
Min. Typ. Max. Units
-
900 1100 ns
-
280 350 ns
-
80 100 mJ
-
500 650 ns
-
200 400 ns
-
140 180 mJ
-
80
100 µC
-
250
-
A
-
70
-
mJ
Test Conditions
I = 400A
C
VGE = ±15V
VCE = 900V
R
G(ON)
=
R
G(OFF)
=
2.2Ω
L ~ 100nH
IF = 400A, VR = 50% VCES,
dIF/dt = 2500A/µs
Min. Typ. Max. Units
-
1010 1200 ns
-
390 500 ns
-
100 150 mJ
-
660 800 ns
-
310 400 ns
-
200 270 mJ
-
110 150 µC
-
300
-
A
-
70
-
mJ
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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