GP801DCS18 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
GP801DCS18 Datasheet PDF : 10 Pages
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GP801DCS18
1600
1400
1200
Tj = 25˚C
1000
800
Tj = 125˚C
600
400
200
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
2000
1800
1600
1400
1200
1000
800
600
400
Tcase = 125˚C
Vge = ±15V
200 Rg(min) = 2.2Ω
Rg(min) : Minimum recommended value
0
0
400
800
1200
1600
Collector-emitter voltage, Vce - (V)
RBSOA
Fig. 8 Reverse bias safe operating area
2000
10000
IC max. (single pulse)
1000
100
10
100
10
50µs
100µs
1
tp = 1ms
Diode
Transistor
1
1
10
100
1000
Collector-emitter voltage, Vce - (V)
Fig. 9 Forward bias safe operating area
10000
0.1
1
10
100
1000
Pulse width, tp - (ms)
Fig. 10 Transient thermal impedance
10000
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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