GP800DCS18 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
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GP800DCS18 Datasheet PDF : 10 Pages
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GP800DCS18
TYPICAL CHARACTERISTICS
1600
1400
Common emitter
Tcase = 25˚C
Vge = 20/15/12V
1200
1000
Vge = 10V
800
600
400
200
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig.3 Typical output characteristics
1600
1400
Common emitter
Tcase = 125˚C
Vge = 20/15/12V
1200
1000
Vge = 10V
800
600
400
200
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, Vce - (V)
Fig.4 Typical output characteristics
350
Tcase = 125˚C
VGE = ±15V
300 VCE = 900V
Rg = 2.2 OhmΩ
250
200
150
EON
EOFF
EREC
100
50
0
0 100 200 300 400 500 600 700 800
Collector current, IC - (A)
Fig.5 Typical switching energy vs collector current
700
Tcase = 125˚C
EON
VGE = ±15V
600 VCE = 900V
IC = 800A
500
400
EOFF
300
200
EREC
100
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, RG - (Ohms)
Fig.6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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