GP800DCS18 Ver la hoja de datos (PDF) - Dynex Semiconductor

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GP800DCS18

Chopper Switch IGBT Module

Dynex Semiconductor 

GP800DCS18

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise

Symbol

Parameter

t

d(off)

t

f

E

OFF

td(on)

t

r

E

ON

Q

rr

Irr

EREC

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

Diode reverse current

Diode reverse recovery energy

Tcase = 125˚C unless stated otherwise

Symbol

Parameter

td(off)

tf

EOFF

td(on)

tr

EON

Qrr

Irr

E

REC

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

Diode reverse current

Diode reverse recovery energy

Test Conditions

IC = 800A

VGE = ±15V

VCE = 900V

RG(ON) = RG(OFF) = 2.2Ω

L ~ 100nH

IF = 800A, VR = 50% VCES,

dIF/dt = 3500A/µs

Min. Typ. Max. Units

-

1000 1200 ns

-

200 300 ns

-

200 300 mJ

-

300 400 ns

-

200 300 ns

-

200 300 mJ

-

180 240 µC

-

450

-

A

-

120

-

mJ

Test Conditions

I = 800A

C

VGE = ±15V

VCE = 900V

R

G(ON)

=

R

G(OFF)

=

2.2Ω

L ~ 100nH

IF = 800A, VR = 50% VCES,

dI /dt

F

=

3000A/µs

Min. Typ. Max. Units

-

1200 1400 ns

-

250 350 ns

-

300 400 mJ

-

400 550 ns

-

250 350 ns

-

350 450 mJ

-

300 400 µC

-

525

-

A

-

190

-

mJ

4/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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