SI7145DP Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI7145DP Datasheet PDF : 13 Pages
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MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
180
Si7145DP
Vishay Siliconix
144
108
72
Package Limited
36
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating*
125
3.0
100
2.4
75
1.8
50
1.2
25
0.6
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25
50
75
100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64814
S09-0872-Rev. A, 18-May-09
www.vishay.com
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