SI3850ADV Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SI3850ADV Datasheet PDF : 13 Pages
| |||
Si3850ADV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
1.5
150 °C
1
25 °C
0.1
0.01
0.001
0.0
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.2
0.1
- 0.0
- 0.1
- 0.2
ID = 5 mA
- 0.3
ID = 250 µA
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
10
1.2
0.9
0.6
125 °C
0.3
25 °C
0.0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
24
18
12
6
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power
www.vishay.com
4
Limited by RDS(on)*
1
1 ms
10 ms
0.1
TA = 25 °C
Single Pulse
100 ms
1 s, 10 s
DC
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 73789
S09-2110-Rev. B, 12-Oct-09
Share Link: 