SI3850ADV(2006) Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI3850ADV Datasheet PDF : 9 Pages
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Si3850ADV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
10
1.5
150 °C
1.2
1
25 °C
0.9
0.1
0.6
0.01
0.3
25 °C
125 °C
0.001
0.0
0.3
0.6
0.9
1.2
1.5
VSD – Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.2
0.1
- 0.0
- 0.1
- 0.2
ID = 5 mA
- 0.3
ID = 250 µA
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ – Temperature (°C)
Threshold Voltage
0.0
0
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
24
18
12
6
0
0.001
0.01
0.1
1
10
Time (sec)
Single Pulse Power
10
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4
*Limited by rDS(on)
1
1 ms
10 ms
0.1
TA = 25 °C
Single Pulse
100 ms
1s
10 s
dc
0.01
0.1
BVDSS Limited
1
10
100
VDS – Drain-to-Source Voltage (V)
* VGS minimum VGS at which rDS(on) is specified
Safe Operating Area
Document Number: 73789
S-60470-Rev. A, 27-Mar-06
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