SI1300BDL-T1-GE3 Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI1300BDL-T1-GE3 Datasheet PDF : 6 Pages
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Si1300BDL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
5.0
1
TJ = 150 °C
TJ = 25 °C
0.1
0.01
0.001
0.0
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temperature
1.0
0.9
0.8
ID = 250 µA
0.7
0.6
0.5
0.4
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
10
4.0
3.0
2.0
1.0
0.0
0
10
TA = 125 °C
TA = 25 °C
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
RDS(on) vs. VGS vs. Temperature
8
6
TA = 25 °C
4
2
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
1
Limited by RDS(on)*
10 µs, 100 µs
0.1
0.01
TA = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
100 s
BVDSS Limited
0.001
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area
www.vishay.com
Document Number: 73557
4
S11-2000-Rev. D, 10-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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